Auflistung nach Schlagwort "Fermi level"

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  • Energy dependence of quasiparticle relaxation in a disordered Fermi liquid 
    Schmidt, T.; König, P.; McCann, E.; Fal'ko, V.I.; Haug, Rolf J. (College Park, MD : American Physical Society, 2001)
    Direct measurement of the energy dependence of the inelastic decay rate τ(E) of a quasiparticle state in a disordered conductor was performed using resonant tunneling spectroscopy. Decay rate was obtained from the analysis ...
  • Ferrocene-1,1' -dithiol as molecular wire between Ag electrodes: The role of surface defects 
    Bredow, T.; Tegenkamp, Christoph; Pfnür, Herbert; Meyer, J.; Maslyuk, V.V.; Mertig, I. (College Park, MD : American Institute of Physics, 2008)
    The interaction of ferrocene- 1, 1' -dithiol (FDT) with two parallel Ag(111) surfaces has been theoretically studied at density-functional level. The effect of surface defects on the energetic and electronic structure was ...
  • The inhomogeneous Kibble-Zurek mechanism: Vortex nucleation during Bose-Einstein condensation 
    Del Campo, A.; Retzker, A.; Plenio, Martin B. (Bristol : IOP Publishing Ltd., 2011)
    The Kibble-Zurek mechanism is applied to the spontaneous formation of vortices in a harmonically trapped thermal gas following a temperature quench through the critical value for Bose-Einstein condensation. Whereas in the ...
  • Magnetoresistance anisotropy in Si/SiGe in tilted magnetic fields: Experimental evidence for a stripe-phase formation 
    Zeitler, U.; Schumacher, Hans W.; Jansen, A.G.M.; Haug, Rolf J. (College Park, MD : American Physical Society, 2001)
    The anisotropies induced by an in-plane field in the magnetotransport properties of coinciding Landau levels in the two dimensional electron system of a silicon/silicon germanium (Si/SiGe) heterostructure were investigated. ...
  • Observation of the local structure of landau bands in a disordered conductor 
    Schmidt, T.; Haug, Rolf J.; Fal'ko, V.I.; v. Klitzing, K.; Förster, A.; Lüth, H. (College Park, MD : American Physical Society, 1997)
    The local density of states of heavily doped GaAs is explored at high magnetic fields, where only a single or few Landau bands are occupied. Our experiment is based on resonant tunneling through impurity states and images ...
  • Roughness and stability of silicon on insulator surfaces 
    Czubanowski, M.; Tegenkamp, Christoph; Ernst, W.; Pfnür, Herbert (College Park, MD : American Institute of Physics, 2004)
    The feasibility of low temperature processes (below 800°C), to obtain atomically clean and smooth surfaces on (100) oriented silicon on insulator material (SOI) with negligible variation of the top Si film thickness was ...
  • Towards bose-einstein condensation of semiconductor excitons: The biexciton polarization effect 
    Hägele, D.; Pfalz, S.; Oestreich, Michael (College Park, MD : American Physical Society, 2009)
    We theoretically predict a strong influence of stimulated exciton-exciton scattering on semiconductor luminescence. The stimulated scattering causes circularly polarized instead of unpolarized emission at the biexciton ...